本書系統詳盡地介紹了半導體基礎納米結構在太赫茲電場中的響應特性、空間載流子受激運動機理、精確解析及快速分析的方法。涵蓋了半導體基礎理論，載流子輸運方程分析、有限元數值方法解析、等效電路分析方法等內容。《半導體納米材料在太赫茲電場中的特性(英文版)》由沈韜編著。

1　Introduction
　References

2　Theoretical Framework
　2.1　Electromagnetic Field Theory
　2.2　Brief Review on Related Semiconductor Physics
　　2.2.1　Energy band theory
　　2.2.2　Carrier concentration at thermal equilibrium
　2.3　Charge Transport in Semiconductor
　References

3　Semiconductor Nanostructure in the Static Electric Field　
　3.1　Semiconductor Nanoplate in the Static Field
　3.2　Semiconductor Nanoparticle in the Static Field

4　Response of Elementary Semiconductor Nanostructures in Quasi-Static Electric Field
　4.1　Carrier Dynamics
　4.2　Semiconductor Nanoplate in the Quasi-Static Field
　4.3　Semiconductor Nanoparticle in the Quasi-Static Field
　References

5　Full Wave Analysis
　5.1　Full Wave Analysis of a Semiconductor Nanoparticle
　5.2　Response of Semiconductor Nanoparticle with High Doping Level in Dynamic Field

6　Equivalent Circuit Representation for Conductive Nanostructure
　6.1　Basic Concepts of Equivalent Circuit
　6.2　Equivalent Circuit Representation for the Semiconductor Nanoplate
　6.3　Equivalent Circuit Representation for the Semiconductor Nanoparticle
　6.4　Equivalent Circuit Representation for the Metal Nanoparticle
　References

7　Conclusion
　7.1　Summary
　7.2　Suggestions for Future Work

Appendix A
Appendix B